Research Papers in Physics and Astronomy

 

Date of this Version

5-31-2019

Citation

J. Magn. Magn. Mater. 486, 165262 (2019).

DOI:10.1016/j.jmmm.2019.165262

Comments

© The Author(s) 2019
Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License.

Abstract

Voltage-control of exchange biases through active selection of distinct domain states of the magnetoelectric and antiferromagnetic pinning layer is demonstrated for Cr2O3/CoPd heterostructures. Progress and obstacles towards an isothermal switching of exchange bias are discussed. An alternative approach avoiding exchange bias for voltage-controlled memory exploits boundary magnetization at the surface of Cr2O3 as voltage-controlled state variable. We demonstrate readout and switching of boundary magnetization in ultra-thin Cr2O3/Pt Hall bar devices where reversal of boundary magnetization is achieved via magnetoelectric annealing with simultaneously applied ±0.5 V and 400 mT electric and magnetic fields.

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