Nickel doping of boron carbide grown by plasma enhanced chemical vapor deposition

Authors

• Seong-Don Hwang, University of Nebraska-Lincoln
• N.B. Remmes, University of Nebraska-Lincoln
• Peter A. Dowben, University of Nebraska-LincolnFollow
• D.N. McIlroy, University of Idaho

Document Type

Article

Date of this Version

July 1996

Comments

Published in the Journal of Vacuum Science and Technology B 14(4), Jul/Aug 1996. Copyright © 1996 American Vacuum Society. Used by permission. For free online abstracts, see http://www.avs.org/literature.jvst.b.aspx

Abstract

We have nickel doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadodecaborane (ortho-carborane) was used to grow the boron carbide, while nickelocene [Ni(C₅H₅)₂] was used to introduce nickel into the growing film. The doping of nickel transformed a p-type, B₅C material, relative to lightly doped n-type silicon, to an n-type material. Both n-n heterojunction diodes and n-p heterojunction diodes were constructed, using as substrates n- and p-type Si(111), respectively. With sufficient partial pressures of nickelocene in the plasma reactor, diodes with characteristic tunnel diode behavior can be successfully fabricated.