Heterojunction diode fabrication from polyaniline and a ferroelectric polymer

Authors

B Xu, University of Nebraska-Lincoln
Y. Ovchenkov, University of Nebraska-Lincoln
Mengjun Bai, University of Nebraska-LincolnFollow
A. N. Caruso, University of Nebraska-LincolnFollow
A.V. Sorokin, University of Nebraska-Lincoln
Stephen Ducharme, University of Nebraska-LincolnFollow
Bermard Doudin, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

11-25-2002

Comments

Published Applied Physics Letters 81 (2002) 4281-4283. Permission to use.

Abstract

We have fabricated a p – n heterojunction diode by vapor depositing a thin film of polyaniline on top of the crystalline copolymer: poly(vinylidene fluoride with trifluoroethylene). The formation of a diode is expected from the band offsets of the two polymers near the Fermi level. The interface between the two components was investigated, and an abrupt interface was found that is very different from the inorganic analog.