Department of Physics and Astronomy: Publications and Other Research
Peter Dowben Publications
Document Type
Article
Date of this Version
November 1998
Abstract
We have succeeded in the rf magnetron sputter deposition of high resistivity boron carbide (B1−xCx). This has been accomplished by the sputter depositing the boron carbide from a methane saturated boron carbide target. We show that the composition and optical band gap of the sputter deposited material are functions of the applied rf power. Furthermore, boron carbide/silicon heterojunction diodes fabricated via sputtering compare favorably with those fabricated from borane cage molecule sources using plasma enhanced chemical vapor deposition (PECVD).
Comments
Published in Thin Solid Films 335:1–2 (November 19, 1998), pp. 174–177. doi:10.1016/S0040-6090(98)00876-1 Copyright © 1998 Elsevier Science S.A. Used by permission.