Sputter deposition of high resistivity boron carbide

Authors

• Ahmad A. Ahmad, University of Nebraska-Lincoln
• Natale J. Ianno, University of Nebraska-LincolnFollow
• Seong-Don Hwang, University of Nebraska-Lincoln
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

November 1998

Comments

Published in Thin Solid Films 335:1–2 (November 19, 1998), pp. 174–177. doi:10.1016/S0040-6090(98)00876-1 Copyright © 1998 Elsevier Science S.A. Used by permission.

Abstract

We have succeeded in the rf magnetron sputter deposition of high resistivity boron carbide (B1−xCx). This has been accomplished by the sputter depositing the boron carbide from a methane saturated boron carbide target. We show that the composition and optical band gap of the sputter deposited material are functions of the applied rf power. Furthermore, boron carbide/silicon heterojunction diodes fabricated via sputtering compare favorably with those fabricated from borane cage molecule sources using plasma enhanced chemical vapor deposition (PECVD).