The anisotropic band structure of layered In₄Se₃(001)

Authors

Yaroslav B. Losovyj, University of Nebraska-LincolnFollow
L. Makinistian, INTEC-CONICET, Güemes 3450, 3000 Santa Fe, Argentina
E. A. Albanesi, INTEC-CONICET
A. G. Pethukov, South Dakota School of Mines
Jing Liu, University of Nebraska-Lincoln
P. Galiy, Electronics Department, Ivan Franko National University of Lviv, 50 Dragomanov Str., 79005 Lviv, Ukraine
O. R. Dveriy, Electronics Department, Ivan Franko National University of Lviv, 50 Dragomanov Str., 79005 Lviv, Ukraine
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

10-2008

Comments

Published in J. Appl. Phys. 104, 083713 (2008). Copyright © 2008 American Institute of Physics. Used by permission.

Abstract

There is discernable and significant band dispersion along both high symmetry directions for cleaved ordered surfaces of the layered In₄Se₃(001). The extent of dispersion of approximately 1 eV is observed along the surface chain rows, and about 0.5 eV perpendicular to the surface “furrows,” consistent with theoretical expectations. A possible surface state exists at the surface Brillouin zone edge, in the direction perpendicular to the chains, in a gap of the projected bulk band structure. Excluding the possible surface state, the experimental hole mass is 5.5 times greater along the chains than perpendicular to the chains, but the dispersion is easier to discern.