Effect of gadolinium doping on the electronic band structure of europium oxide

Authors

• Juan Colon Santana, University of Nebraska-Lincoln
• Joonhee Michael An, University of Nebraska-Lincoln
• Ning Wu, University of Nebraska-Lincoln
• Kirill D. Belashchenko, University of Nebraska-LincolnFollow
• Xianjie Wang, University of Wyoming, Laramie
• Pan Liu, University of Wyoming, Laramie
• Jinke Tang, University of WyomingFollow
• Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
• I. N. Yakovkin, Institute of Physics, National Academy of Sciences of Ukraine
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2012

Citation

PHYSICAL REVIEW B 85, 014406 (2012); DOI: 10.1103/PhysRevB.85.014406

Comments

Copyright 2012 American Physical Society

Abstract

High quality films of EuO and Eu_0.96Gd_0.04O were grown on p-type Si(100) via pulsed laser deposition. X-raydiffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements showan apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.