Effect of gadolinium doping on the electronic band structure of europium oxide

Authors

Juan Colon Santana, University of Nebraska-Lincoln
Joonhee Michael An, University of Nebraska-Lincoln
Ning Wu, University of Nebraska-Lincoln
Kirill D. Belashchenko, University of Nebraska-LincolnFollow
Xianjie Wang, University of Wyoming, Laramie
Pan Liu, University of Wyoming, Laramie
Jinke Tang, University of WyomingFollow
Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
I. N. Yakovkin, Institute of Physics, National Academy of Sciences of Ukraine
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2012

Citation

PHYSICAL REVIEW B 85, 014406 (2012); DOI: 10.1103/PhysRevB.85.014406

Comments

Copyright 2012 American Physical Society

Abstract

High quality films of EuO and Eu_0.96Gd_0.04O were grown on p-type Si(100) via pulsed laser deposition. X-raydiffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements showan apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.