Date of this Version
PHYSICAL REVIEW B 85, 014406 (2012); DOI: 10.1103/PhysRevB.85.014406
High quality films of EuO and Eu0.96Gd0.04O were grown on p-type Si(100) via pulsed laser deposition. X-raydiffraction results show that the addition of Gd changes the growth texture from  to . Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements showan apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.