The Debye Temperature for Hydrothermally Grown ThO₂ Single Crystals

Authors

Tony D. Kelly, Air Force Institute of Technology
James C. Petrosky, Air Force Institute of TechnologyFollow
John W. McClory, Air Force Institute of Technology
Timothy Zens, Air Force Institute of Technology
David Turner, Air Force Institute of Technology
J Matthew Mann, Air Force Research Laboratory
Joseph W. Kolis, Clemson University
Juan A. Colon Santana, University of Nebraska-Lincoln
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2013

Citation

Mater. Res. Soc. Symp. Proc. Vol. 15 © 2013

Comments

U.S. Government work

Abstract

The electronic properties of ThO₂ single crystals were studied using x-ray photoemission spectroscopy (XPS). The XPS results show that the Th 4f core level is in an oxidation state that is consistent with that expected for Th in ThO₂. The effective Debye temperature is estimated from the temperature dependent photoemission intensities of the Th 4f core level over the temperature range of 290 to 360 K. A Debye temperature of 468±32 K has been determined.