The Debye Temperature for Hydrothermally Grown ThO₂ Single Crystals

Authors

• Tony D. Kelly, Air Force Institute of Technology
• James C. Petrosky, Air Force Institute of TechnologyFollow
• John W. McClory, Air Force Institute of Technology
• Timothy Zens, Air Force Institute of Technology
• David Turner, Air Force Institute of Technology
• J Matthew Mann, Air Force Research Laboratory
• Joseph W. Kolis, Clemson University
• Juan A. Colon Santana, University of Nebraska-Lincoln
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2013

Citation

Mater. Res. Soc. Symp. Proc. Vol. 15 © 2013

Comments

U.S. Government work

Abstract

The electronic properties of ThO₂ single crystals were studied using x-ray photoemission spectroscopy (XPS). The XPS results show that the Th 4f core level is in an oxidation state that is consistent with that expected for Th in ThO₂. The effective Debye temperature is estimated from the temperature dependent photoemission intensities of the Th 4f core level over the temperature range of 290 to 360 K. A Debye temperature of 468±32 K has been determined.