Department of Physics and Astronomy: Publications and Other Research
Date of this Version
6-1-2020
Citation
Archit Dhingra et al 2020 Semicond. Sci. Technol. 35 065009
Abstract
The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001 is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001 is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.
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Atomic, Molecular and Optical Physics Commons, Condensed Matter Physics Commons, Engineering Physics Commons, Other Physics Commons
Comments
CC BY-NC-ND 3.0 licence