Corrigendum: Surface termination and Schottky-barrier formation of In₄Se₃(001) [Semiconductor Science and Technology (2020) 35 (065009) DOI: 10.1088/1361-6641/ab7e45]

Authors

Archit Dhingra, University of Nebraska–LincolnFollow
Pavlo V. Galiy, Ivan Franko National University of Lviv
Lu Wang, University of Science and Technology of China
Nataliia S. Vorobeva, University of Nebraska—LincolnFollow
Alexey Lipatov, University of Nebraska-LincolnFollow
Angel Torres, University of Nebraska–LincolnFollow
Taras M. Nenchuk, Ivan Franko National University of Lviv
Simeon J. Gilbert, University of Nebraska–Lincoln
Alexander Sinitskii, University of Nebraska - LincolnFollow
Andrew J. Yost, Oklahoma State University
Wai-Ning Mei, University of Nebraska at OmahaFollow
Keisuke Fukutani, University of Nebraska-LincolnFollow
Jia Shiang Chen, Brookhaven National Laboratory
Peter Dowben, University of Nebraska - LincolnFollow

ORCID IDs

Archit Dhingra https://orcid.org/0000-0001-9352-4361

Alexey Lipatov https://orcid.org/0000-0001-5043-1616

Alexander Sinitskii https://orcid.org/0000-0002-8688-3451

Peter A Dowben https://orcid.org/0000-0002-2198-4710

Date of this Version

6-1-2021

Citation

Semicond. Sci. Technol. 36 (2021) 069501 (1p)

Comments

© 2021 IOP Publishing Ltd

Abstract

Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support the findings of this study are available upon reasonable request from the authors.