Indium segregation to the selvedge of In₄Se₃ (001)

Authors

Archit Dhingra, University of Nebraska–LincolnFollow
Zoe G. Marzouk, University of Nebraska–Lincoln
Esha Mishra, University of Nebraska–LincolnFollow
Pavlo V. Galiy, Ivan Franko National University of Lviv
Taras M. Nenchuk, Ivan Franko National University of Lviv
Peter Dowben, University of Nebraska - LincolnFollow

Date of this Version

9-15-2020

Citation

Published in Physica B: Condensed Matter, Volume 593, 15 September 2020, 412280

Comments

© 2020 published by Elsevier. This manuscript is made available under the Elsevier user license

Abstract

Thermal motion of the surface atoms will lead to a decrease in photoemission intensity, while surface segregation may result in an increase of some phostoemission intensities. For In4Se3(001), both effects are seen. The Debye–Waller factor plot, based on the temperature dependent X-ray photoemission spectroscopy (XPS) measurements on In4Se3(001), suggests an upper bound of 203 ± 6 K for the effective Debye temperature, based on the surface component of the In 3d5/2 core-level. Indium is found to segregate to selvedge (subsurface region) of the crystal.