Fabrication of n-type nickel doped B₅ C_1+δ homojunction and heterojunction diodes

Authors

• Seong-Don Hwang, University of Nebraska-Lincoln
• Ken Yang, University of Nebraska-Lincoln
• Peter A. Dowben, University of Nebraska-LincolnFollow
• Ahmad A. Ahmad, University of Nebraska-Lincoln
• N.J. Ianno, University of Nebraska-Lincoln
• J.Z. Li, Kansas State University
• J.Y. Lin, Kansas State University
• H.X. Jiang, Kansas State University
• D.N. McIlroy, University of Idaho-Moscow

Document Type

Article

Date of this Version

November 1996

Comments

Published Appl. Phys. Lett. 70 (1997) 1028-1030. Permission to use.

Abstract

We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B₅C_1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C₅H₅)₂] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B₅C_1+δ on both n-type silicon and p-type B₅C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures. ©1997 American Institute of Physics.