Fabrication of boron-carbide boron heterojunction devices

Authors

• Seong-Don Hwang, University of Nebraska-Lincoln
• Dongjin Byun, University of Nebraska-Lincoln
• N.J. Ianno, University of Nebraska-Lincoln
• Peter A. Dowben, University of Nebraska-LincolnFollow
• H.R. Kim, Research Institute for Industrial Science and Technology, Pohang, Korea

Document Type

Article

Date of this Version

January 1996

Comments

Published Appl. Phys. Lett. 68 (1996) 1495-1497. Permission to use.

Abstract

We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B₅C) acts as a p-type material. Both boron and boron–carbide (B₅C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. ©1996 American Institute of Physics.