Surface photovoltage effects on the isomeric semiconductors of boron-carbide

Authors

A. N. Caruso, University of Nebraska-LincolnFollow
Snjezana Balaz, University of Nebraska-LincolnFollow
Bo Xu, University of Nebraska-Lincoln
Peter A. Dowben, University of Nebraska-LincolnFollow
A.S. McMullen-Gunn, University of Nebraska-Lincoln
Jennifer I. Brand, University of Nebraska-LincolnFollow
Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
D.N. McIlroy, University of Idaho

Date of this Version

2-23-2004

Comments

Published Applied Physics Letters 84 (2004) 1302-1304. Permission to use.

Abstract

During exposure to synchrotron radiation, closo 1,7-dicarbadodecaborane (metacarborane) and closo 1,2-dicarbadodecaborane (orthocarborane) decompose, and are accompanied by increasingly evident photoemission surface photovoltage effects. We show that metacarborane and orthocarborane form self-doped n-type and p-type boron-carbides, respectively. Surface photovoltage effects dominate the photoemission final state, not the changes in electronic structure due to decomposition. © 2004 American Institute of Physics. [DOI: 10.1063/1.1648136]