Research Papers in Physics and Astronomy


Date of this Version

September 1990


United States Patent
Patent Number: 4,957,773


Depopsition of a boron nitride film is carried out by introducing decaborane and dry nitrogen or ammonia into a plasma-assisted chemical vapor deposition chamber. The nitrogen or ammonia partial pressure should provide an excess over the decarborane pressures for example 200 milliTorr of N2 or NH3 and 50 MilliTorr of B10H14. Other film layers can also be produced starting from decaborane.

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