Selective area deposition of boron on Si(111) induced by synchrotron radiation

Authors

• R.A. Rosenberg, Synchrotron Radiation Center, University of Wisconsin–Madison, Stoughton, Wisconsin
• F.K. Perkins, University of Wisconsin–Madison
• D.C. Mancini, University of Wisconsin–Madison
• G.R. Harp, University of Wisconsin–Madison
• B.P. Tonner, University of Wisconsin–Madison
• S. Lee, Syracuse University
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

February 1991

Comments

Published by American Institute of Physics; Applied Physics Lett. 58 (1991) 607–609. Copyright 1991. Permission to use.

Abstract

We have performed the first deposition of boron on Si(111) induced by broadband synchrotron radiation (SR). Contamination-free thin films were grown at room temperature using decaborane (B₁₀H₁₄) as the source gas. After deposition the films were examined using photoelectron microscopy, which showed that film growth was limited to the region illuminated by SR. The temperature of the substrate rose less than 10 K. These results indicate that gas-phase excitations are not important and that the films are deposited by a nonthermal, photoinduced mechanism. Masked exposures demonstrate the potential of this technique for patterned deposition.