Complex domain-wall dynamics in compressively strained Ga_1−xMn_xAs epilayers

Authors

Liza Herrera Diez, Max-Planck-Institut für FestkörperforschungFollow
Reinhard K. Kremer, Max-Planck-Institut für FestkörperforschungFollow
Axel Enders, University of Nebraska-LincolnFollow
Matthias Rössle, Max-Planck-Institut für FestkörperforschungFollow
Erhan Arac, Max-Planck-Institut für Festkörperforschung
Jan Honolka, Max-Planck-Institut für FestkörperforschungFollow
Klaus Kern, Max-Planck-Institut für FestkörperforschungFollow
Ernesto Placidi, Università di Roma “Tor VergataFollow
Fabrizio Arciprete, Università di Roma “Tor Vergata,” CNR-INFM

Date of this Version

2008

Comments

Published in PHYSICAL REVIEW B 78, 155310 (2008); DOI: 10.1103/PhysRevB.78.155310 ©2008 The American Physical Society. Used by permission.

Abstract

The domain-wall-induced reversal dynamics in compressively strained Ga_1−xMn_xAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of a uniaxial part in the in-plane magnetic anisotropy 90°± δ domain walls with considerably different dynamic behavior are observed. While the 90° + δ reversal is identified to be propagation dominated with a small number of domains, the case of 90°− δ reversal involves a larger number of nucleation centers. The domain-wall nucleation/propagation energies ε for both transitions are estimated using model calculations from which we conclude that single domain devices can be achievable using the 90° + δ mode.