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The domain-wall-induced reversal dynamics in compressively strained Ga1−xMnxAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of a uniaxial part in the in-plane magnetic anisotropy 90°± δ domain walls with considerably different dynamic behavior are observed. While the 90° + δ reversal is identified to be propagation dominated with a small number of domains, the case of 90°− δ reversal involves a larger number of nucleation centers. The domain-wall nucleation/propagation energies ε for both transitions are estimated using model calculations from which we conclude that single domain devices can be achievable using the 90° + δ mode.