Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Authors

Kirill D. Belashchenko, University of Nebraska-LincolnFollow
Oleg Tchernyshyov, Johns Hopkins UniversityFollow
Alexey Kovalev, University of Nebraska - LncolnFollow
Oleg A. Tretiakov, Tohoku UniversityFollow

Date of this Version

2016

Citation

APPLIED PHYSICS LETTERS 108, 132403 (2016)
doi 10.1063/1.4944996

Comments

Copyright 2016 AIP Publishing LLC. Used by permission.

Abstract

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr₂O₃ is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr₂O₃, the maximal mobility of 0.1 m/(s Oe) is reached at E = 0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr₂O₃. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.