MAGNETO-ELECTRIC LOGIC DEVICES USING SEMICONDUCTOR CHANNEL WITH LARGE SPIN-ORBIT COUPLING (U.S. Patent Application)

Dmitri E. Nikonov, Intel Corporation, Hillsboro, Oregon
Christian Binek, University of Nebraska-Lincoln
Xia Hong, University of Nebraska–Lincoln
Jonathan P. Bird, SUNY University at Buffalo
Kang L. Wang
Peter Dowben, University of Nebraska-Lincoln

Document Type Article

Appl. No.: 15/898,457

Abstract

Antiferromagnetic magneto-electric spin-orbit read (AF-SOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.