Date of this Version
US Patent Pub. No.: US 2018/0240896 A1
Antiferromagnetic magneto-electric spin-orbit read (AF-SOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.