The local metallicity of gadolinium doped compound semiconductors

Authors

J. A. Colon Santana, University of Nebraska, W Scott Engineering Center
Pan Liu, University of Wyoming
Xianjie Wang, University of Wyoming
J. Tang, University of Wyoming
S. R. McHale, Air Force Institute of Technology
D. Wooten, Air Force Institute of Technology
J. W. McClory, Air Force Institute of Technology
J. C. Petrosky, Air Force Institute of Technology
J. Wu, University of Puerto Rico, Rio Piedras
R. Palai, University of Puerto Rico, Rio Piedras
Ya B. Losovjy, University of Nebraska - Lincoln
P. A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2012

Citation

J. Phys.: Condens. Matter 24 (2012) 445801 (6pp)

Comments

© 2012 IOP Publishing Ltd

This document is a U.S. government work and is not subject to copyright in the United States.

doi:10.1088/0953-8984/24/44/445801

Abstract

The local metallicities of Hf_0:97Gd_0:03O₂, Ga_0:97Gd_0:03N, Eu_0:97Gd_0:04O and EuO films were studied through a comparison of the findings from constant initial state spectroscopy using synchrotron light. Resonant enhancements, corresponding to the 4d→4f transitions of Eu and Gd, were observed in some of the valence band photoemission features. The resonant photoemission intensity enhancements for the Gd 4f photoemission features are far stronger for the more insulating host systems than for the metallic system Eu_0:96Gd_0:04O. The evidence seems to suggest a correlation between the effective screening in the films and the resonant photoemission process.