Optical control of polarization in ferroelectric heterostructures

Authors

Tao Li, University of Nebraska - Lincoln
Alexey Lipatov, University of Nebraska-LincolnFollow
Haidong Lu, University of Nebraska-LincolnFollow
Hyungwoo Lee, University of Wisconsin-MadisonFollow
Jung-Woo Lee, University of Wisconsin-Madison
Engin Torun, University of Luxembourg
Ludger Wirtz, University of Luxembourg
Chang-Beom Eom, University of Wisconsin-Madison
Jorge Iniguez, Luxembourg Institute of Science and Technology
Alexander Sinitskii, University of Nebraska-LincolnFollow
Alexei Gruverman, University of Nebraska - LincolnFollow

ORCID IDs

Alexey Lipatov

Alexander Sinitskii

Alexei Gruverman

Document Type

Article

Date of this Version

2018

Citation

NATURE COMMUNICATIONS | (2018) 9:3344

Comments

© The Author(s) 2018

Open access

DOI: 10.1038/s41467-018-05640-4

Abstract

In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO₃-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS₂ as a top electrode. This effect is attributed to the redistribution of the photogenerated carriers and screening charges at the MoS₂/BaTiO₃ interface. Specifically, a twostep process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS₂ optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.