Chiral photocurrent in a Quasi-1D TiS3 (001) phototransistor

Authors

Simeon J. Gilbert, University of Nebraska-Lincoln
Mingxing Li, Brookhaven National Laboratory
Jia-Shiang Chen, Brookhaven National Laboratory
Hemian Yi, Synchrotron SOLEIL and Université Paris-Saclay
Alexey Lipatov, University of Nebraska-LincolnFollow
Jose Avila, Synchrotron SOLEIL and Université Paris-Saclay
Alexander Sinitskii, University of Nebraska-LincolnFollow
Maria C. Asensio, Materials Science Institute of Madrid, Spanish Scientific Research Council, MATINÉE
Peter A. Dowben, University of Nebraska-LincolnFollow
Andrew J. Yost, Oklahoma State University

Document Type

Article

Date of this Version

2-1-2023

Citation

J. Phys.: Condens. Matter 35 (2023) 124003 (8pp). https://doi.org/10.1088/1361-648X/acb581

Comments

Used by permission.

Abstract

The presence of in-plane chiral effects, hence spin–orbit coupling, is evident in the changes in the photocurrent produced in a TiS₃(001) field-effect phototransistor with left versus right circularly polarized light. The direction of the photocurrent is protected by the presence of strong spin–orbit coupling and the anisotropy of the band structure as indicated in NanoARPES measurements. Dark electronic transport measurements indicate that TiS₃ is n-type and has an electron mobility in the range of 1–6 cm²V⁻¹s⁻¹. I–V measurements under laser illumination indicate the photocurrent exhibits a bias directionality dependence, reminiscent of bipolar spin diode behavior. Because the TiS₃ contains no heavy elements, the presence of spin–orbit coupling must be attributed to the observed loss of inversion symmetry at the TiS₃(001) surface.