Method for monitoring GaAs photocathode heat cleaning temperature

Authors

Nathan B. Clayburn, University of Nebraska - LincolnFollow
Kenneth Wayne Trantham, University of Nebraska at KearneyFollow
M. Dunn, University of Nebraska-Lincoln
Timothy J. Gay, University of Nebraska - LincolnFollow

Date of this Version

2016

Citation

REVIEW OF SCIENTIFIC INSTRUMENTS 87, 124903 (2016)

doi:10.1063/1.4972255]

Comments

Published by AIP Publishing. Used by permission.

Abstract

Before a GaAs photocathode can be activated to achieve a negative electron affinity condition, the GaAs crystal must be cleaned. This is most commonly done by ohmic, radiative, or electron bombardment heating. We report a new technique to monitor the temperature of heated GaAs photocathodes by observation with a camera. The method is robust and yields the same temperatures for different GaAs samples heated using different methods in different mounting configurations.