Domain formation mechanism of the Si(110) “16 × 2” reconstruction

Authors

• N. K. Lewis, University of Manchester
• Nathan B. Clayburn, University of Nebraska - LincolnFollow
• Evan M. Brunkow, University of Nebraska - LincolnFollow
• Timothy J. Gay, University of Nebraska - LincolnFollow
• Y. Lassailly, CNRS-Ecole Polytechnqiue
• J. Fujii, Istituto Officina dei Materiali (IOM), CNR, Trieste
• I. Vobornik, Istituto Officina dei Materiali (IOM), CNR, Trieste
• W. R. Flavell, University of Manchester
• E. A. Seddon, University of Manchester

Document Type

Article

Date of this Version

2017

Citation

PHYSICAL REVIEW B 95, 205306 (2017)

Comments

©2017 American Physical Society. Used by permission.

Abstract

The main factor that determines which of the two domains forms upon reconstruction of the Si(110) “16 × 2” surface has been investigated. Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) images showed that the domain orientation was independent of the heating current direction used to induce the Si(110) “16 × 2” reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of domain orientations in the LEED images, and they confirmed that the reconstruction is two dimensionally chiral. It is proposed that the domain orientation upon surface reconstruction is determined by the direction of monatomic steps present on the Si(110) plane. This is determined in turn by the direction at which the surface is polished off-axis from the (110) plane.