Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Authors

Mohammad Abuwasib, University at BuffaloFollow
Haidong Lu, University of Nebraska-LincolnFollow
Tao Li, University of Nebraska-LincolnFollow
Pratyush Buragohain, University of Nebraska-LincolnFollow
Hyungwoo Lee, University of Wisconsin-MadisonFollow
Chang-Beom Eom, University of Wisconsin-MadisonFollow
Alexei Gruverman, University of Nebraska-LincolnFollow
Uttam Singisetti, University at BuffaloFollow

Date of this Version

2016

Citation

APPLIED PHYSICS LETTERS 108, 152904 (2016)
http://dx.doi.org/10.1063/1.4947020

Comments

Published by AIP Publishing

Abstract

Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO₃/SrRuO₃ ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300×300 nm² exhibiting a tunneling electroresistance (TER) effect of the order of 2.7×10⁴% have been fabricated and tested. Measured current density of 75 A/cm² for the ON state and a long polarization retention time of ON state (>10 h) show a lot of promise for implementation of high-density BaTiO₃-based FTJ memory devices in future.