Moving Towards the Magnetoelectric Graphene Transistor

Authors

• Shi Cao, University of Nebraska-LincolnFollow
• Zhiyong Xiao, University of Nebraska - LincolnFollow
• Chun Pui Kwan, SUNY University at BuffaloFollow
• Kai Zhang, University of Science and Technology of ChinaFollow
• Jonathan P. Bird, SUNY University at BuffaloFollow
• Lu Wang, University of Science and Technology of ChinaFollow
• Wai-Ning Mei, University of Nebraska at OmahaFollow
• Xia Hong, University of Nebraska–LincolnFollow
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2017

Citation

Applied Physics Letters (2017) 111: 182402

Comments

Used by permission

Abstract

The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr₂O₃ (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.