Research Papers in Physics and Astronomy

 

Date of this Version

2017

Document Type

Article

Citation

Appl. Phys. Lett. 111, 182402

Comments

Used by permission.

Abstract

The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.

Share

COinS