Moving towards the magnetoelectric graphene transistor

Authors

Shi Cao, University of Nebraska-LincolnFollow
Zhiyong Xiao, University of Nebraska - LincolnFollow
Chun Pui Kwan, SUNY University at BuffaloFollow
Kai Zhang, University of Science and Technology of ChinaFollow
Jonathan P. Bird, SUNY University at BuffaloFollow
Lu Wang, University of Science and Technology of ChinaFollow
Wai-Ning Mei, University of Nebraska at OmahaFollow
Xia Hong, University of Nebraska–LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2017

Document Type

Article

Citation

Appl. Phys. Lett. 111, 182402

Comments

Used by permission.

Abstract

The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr₂O₃ (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.