Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films

Authors

Y. Bason, Bar Ilan University
L. Klein, Bar Ilan UniversityFollow
J. -B. Yau, Yale University
X. Hong, University of Nebraska–LincolnFollow
C. H. Ahn, Yale University

Date of this Version

2004

Document Type

Article

Citation

Appl. Phys. Lett., Vol. 84, No. 14

Comments

Used by permission.

Abstract

The transverse resistivity in thin films of La_0.84Sr_0.16MnO₃ (LSMO) exhibits sharp field-symmetric jumps below T_C . We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and nonvolatile memory devices.