Giant Planar Hall Effect in Colossal Magnetoresistive La_0.84Sr_0.16MnO₃ Thin Films

Authors

Y. Bason, Bar Ilan UniversityFollow
L. Klein, Bar Ilan UniversityFollow
J.-B. Yau, Yale University
X. Hong, University of Nebraska–LincolnFollow
C. H. Ahn, Yale UniversityFollow

Document Type

Article

Date of this Version

2004

Citation

Applied Physics Letters (2004) 84(14)

Comments

Used by permission

Abstract

The transverse resistivity in thin films of La_0.84Sr_0.16MnO₃ (LSMO) exhibits sharp field-symmetric jumps below T_C . We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and nonvolatile memory devices.