Epitaxial Growth of Pb(Zr_0.2Ti_0.8)O₃ on Si and Its Nanoscale Piezoelectric Properties

Authors

A. Lin, Yale University
X. Hong, University of Nebraska–LincolnFollow
V. Wood, Yale University
A. A. Verevkin, Yale University
C. H. Ahn, Yale UniversityFollow
R. A. McKee, Oak Ridge National Laboratory
F. J. Walker, Oak Ridge National Laboratory
E. D. Specht, Oak Ridge National Laboratory

Document Type

Article

Date of this Version

2001

Citation

Applied Physics Letters (2001) 78(14)

Comments

Used by permission

Abstract

We have demonstrated a route to epitaxial Pb(Zr_0.2Ti_0.8)O₃ on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO₃ transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 Å, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ~50 pm/V that is switchable down to sub-100-nm dimensions.