Epitaxial Growth of Pb(Zr_0.2Ti_0.8)O₃ on Si and Its Nanoscale Piezoelectric Properties

Authors

• A. Lin, Yale University
• X. Hong, University of Nebraska–LincolnFollow
• V. Wood, Yale University
• A. A. Verevkin, Yale University
• C. H. Ahn, Yale UniversityFollow
• R. A. McKee, Oak Ridge National Laboratory
• F. J. Walker, Oak Ridge National Laboratory
• E. D. Specht, Oak Ridge National Laboratory

Document Type

Article

Date of this Version

2001

Citation

Applied Physics Letters (2001) 78(14)

Comments

Used by permission

Abstract

We have demonstrated a route to epitaxial Pb(Zr_0.2Ti_0.8)O₃ on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO₃ transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 Å, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ~50 pm/V that is switchable down to sub-100-nm dimensions.