United States Patent: APPLICATION OF HIGH SPIN POLARIZATION MATERIALS IN TWO TERMINAL NON-VOLATILE BISTABLE MEMORY DEVICES

Authors

Bernard Doudin, University of Nebraska-LincolnFollow
Andrei Sokolov, University of Nebraska-LincolnFollow
Cheol-Soo Yang, Lincoln, Nebraska
Lu Yuan, Lincoln, Nebraska
Sy-Hwang Liou, University of Nebraska-LincolnFollow

Date of this Version

12-2-2003

Comments

United States Patent. Patent No.: US 6,657,888 B1.

Abstract

Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one Cr0₂/Cr₂0₃/ CrO₂ sequence but typically have multiple Cr0₂/Cr₂0₃/ CrO₂ sequences in series.