Ferromagnetic resonance studies in ZnMnO dilute ferromagnetic semiconductors

Authors

B. Lasley-Hunter, Norfolk State University, Norfolk, Virginia
D. Hunter, Norfolk State University, Norfolk, Virginia
Maxim Noginov, Norfolk State University, Norfolk, Virginia
J.B. Dadson, Norfolk State University, Norfolk, Virginia
K. Zhang, Norfolk State University, Norfolk, Virginia
Rakhim R. Rakhimov, Center for Materials Research, Norfolk State UniversityFollow
Aswini K. Pradhan, Center for Materials Research, Norfolk State UniversityFollow
Jun Zhang, University of Nebraska - LincolnFollow
David J. Sellmyer, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

4-15-2006

Comments

Published by American Institute of Physics. J. Applied Physics 99, 08M116 (2006). ©2006 American Institute of Physics. Permission to use. http://jap.aip.org/jap/.

Abstract

We report on the ferromagnetic resonance studies on ZnMnO films grown by the pulsed-laser deposition technique. ZnMnO films were annealed in different atmospheres. The films grown and annealed in oxygen demonstrate ferromagnetic behavior at room temperature and below. However, annealing in either nitrogen or argon deteriorates the ferromagnetic response of the films. Further annealing the films in oxygen recovers the ferromagnetic response. Our results suggest that oxygen plays a major role for controlling the ferromagnetic properties in ZnMnO films.