Department of Physics and Astronomy: Publications and Other Research

Evgeny Tsymbal Publications
ORCID IDs
Tsymbal http://orcid.org/0000-0002-6728-5489
Document Type
Article
Date of this Version
8-2002
Citation
Physical Review B (2002) 66: 073201
Abstract
Using a realistic model for the atomic and electronic structure of amorphous silicon, we explore spin injection into amorphous semiconductors. We calculate the spin-dependent conductance of magnetoresistive devices within the Landauer-Büttiker formalism including inelastic scattering. We find that reducing the density of injected carriers and increasing the spin polarization of the electrodes are favorable for spin injection, whereas inelastic scattering is detrimental, and show that the upper limit for magnetoresistance is given by Julliere's formula.
Comments
Copyright © 2002, American Physical Society. Used by permission