Atomic Motion in Ferromagnetic Break Junctions: Comment and Response

Authors

• S.-F. Shi, Cornell University, Ithaca, New York
• David C. Ralph, Cornell UniversityFollow
• Andrei Sokolov, University of Nebraska-LincolnFollow
• Chunjuan Zhang, University of Nebraska - Lincoln
• Evgeny Y. Tsymbal, University of Nebraska-LincolnFollow
• Jody G. Redepenning, University of Nebraska-LincolnFollow
• Bernard Doudin, Institut de Physique et de Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-ULP, 67034 Strasbourg, FranceFollow

ORCID IDs

Tsymbal http://orcid.org/0000-0002-6728-5502

Document Type

Article

Date of this Version

2007

Citation

Nature Nanotechnology (2007) 2: 522–523

dois: 10.1038/nnano.2007.251a and 10.1038/nnano.2007.251b

Comments

Copyright © 2007, Nature Publishing Group. Used by permission

Abstract

Authors’ response

In their comment, Shi and Ralph emphasize that conductance of Ni point contacts produced by an electro-migration technique can occasionally exhibit two-level fluctuations (TLF), mimicking the discrete steps in the conductance of the point contacts as a function of the applied magnetic-field direction. They explain the nature of these steps in terms of atomic motion rather than intrinsic electronic effect. We emphasize in this reply that our results, obtained on a different magnetic material synthesized by a different method, do not show a