Magnetoelectric Effect at the Ni/HfO₂ Interface Induced by Ferroelectric Polarization

Authors

• Qiong Yang, University of Nebraska - LincolnFollow
• Lingling Tao, University of Nebraska-LincolnFollow
• Zhen Jiang, University of Nebraska - Lincoln
• Yichun Zhou, Xiangtan University
• Evgeny Y. Tsymbal, University of Nebraska-LincolnFollow
• Vitaly Alexandrov, University of Nebraska - LincolnFollow

ORCID IDs

Tsymbal http://orcid.org/0000-0002-6728-5571

Document Type

Article

Date of this Version

8-21-2019

Citation

Physical Review Applied (2019) 12: 024044

doi: 10.1103/PhysRevApplied.12.024044

Comments

Copyright © 2019, American Physical Society. Used by permission

Abstract

Driven by the technological importance of the recently discovered ferroelectric HfO₂, we explore a magnetoelectric effect at the HfO₂-based ferroelectric-ferromagnetic interface. Using density-functionaltheory calculations of the Ni/HfO₂/Ni (001) heterostructure as a model system, we predict a stable and sizable ferroelectric polarization in a few-nm-thick HfO₂ layer. For the Ni/HfO₂ interface with opposite polarization directions (pointing to or away from the interface), we find a sizable difference in the interfacial Ni—O bonding, resulting in dissimilar degrees of depletion of the electron density around the interface. The latter affects the relative population of the exchange-split majority and minority spin bands at the interface and thus the interfacial magnetic moments. The sizable change in the interface magnetization with ferroelectric polarization reversal of HfO₂ manifests a significant ferroelectrically induced magnetoelectric effect at the Ni/HfO₂ interface. Our results reveal promising prospects of ferroelectric-ferromagnetic composite multiferroics based on HfO₂-based ferroelectric materials.