Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

Authors

J. H. Lee, Cornell University
X. Ke, Pennsylvania State University
R. Misra, Pennsylvania State University
J. F. Ihlefeld, Pennsylvania State University
X. S. Xu, University of Nebraska-LincolnFollow
Z. G. Mei, Pennsylvania State University
T. Heeg, Cornell University
M. Roeckerath, Research Centre Julich
J. Schubert, Research Centre Julich
Z. K. Liu, Pennsylvania State University
J. L. Musfeldt, University of Tennessee
P. Schiffer, Pennsylvania State University
D. G. Schlom, Cornell UniversityFollow

Date of this Version

2010

Document Type

Article

Citation

Appl. Phys. Lett. 96, 262905 (2010)

Comments

Used by permission.

Abstract

We have developed the means to grow BiMnO₃ thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO₃ may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with w rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO₃ has a direct band gap of 1.1±0.1 eV.