Photoconductivity in BiFeO3 thin films

Authors

S. R. Basu, University of California - Berkeley
L. W. Martin, University of California - BerkeleyFollow
Y. H. Chu, University of California - Berkeley
M. Gajek, University of California - Berkeley
R. Ramesh, University of California - Berkeley
R. C. Rai, Buffalo State College
X. S. Xu, University of Nebraska-LincolnFollow
J. L. Musfeldt, University of Tennessee

Date of this Version

2008

Document Type

Article

Citation

Appl. Phys. Lett. 92, 091905 (2008)

Comments

Used by permission.

Abstract

The optical properties of epitaxial BiFeO₃ thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17 eV, a direct gap (2.667±0.005 eV at 300 K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO₃ films under illumination from a 100 mW/cm² white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1 Torr. Large increases in photoconductivity are observed in light.