Metal Semiconductor Contact between Gold and Boron Carbide

Authors

Ethiyal Raj Wilson, University of Nebraska - LincolnFollow
Elena Echeverria, University of Nebraska - LincolnFollow
Aiyun Liu, University of Nebraska - LincolnFollow
Bin Dong, University of North TexasFollow
George Peterson, University of Nebraska - LincolnFollow
Michael Nastasi, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow

ORCID IDs

George Peterson

Date of this Version

Fall 8-2016

Document Type

Poster

Citation

“Metal Semiconductor Contact between Gold and Boron Carbide”, UCARE Summer Research Symposium, Wednesday, Aug. 10, 2015, Lincoln, Nebraska, University of Nebraska-Lincoln [Presented by Ethiyal Raj Wilson]

Comments

Copyright © 2016 Ethiyal Raj Wilson, E. Echeverria, A. Liu, B. Dong, G. Peterson, M. Nastasi, P. Dowben

Abstract

We have investigated the interaction of gold (Au) with the semiconductor boron carbide through X-ray photoemission and heterojunction diode fabrication. The plasma enhanced chemical vapor deposition (PECVD) hydrogenated semiconducting boron carbide films, deposited from closo-1,7-dicarbadodecaborane (metacarborane, m-B₁₀C₂H₁₂), shows a shift in the binding energies of the core level photoemission features when gold is deposited on the surface. The shifting of the B 1s level is smaller than for the C 1s level and the non-uniform nature of the shifts indicates a strong, complex and reversible gold chemical interaction with the surface, particularly with the C sites. The capacitance-voltage, C(V), and current versus voltage, I(V), results for the metacarborane film deposited on p-type Si(100) yield a carrier scattering time of 50 ns which is significantly smaller than the 35 ms for the PECVD orthocarborane boron carbide films.