Date of this Version
“Metal Semiconductor Contact between Gold and Boron Carbide”, UCARE Summer Research Symposium, Wednesday, Aug. 10, 2015, Lincoln, Nebraska, University of Nebraska-Lincoln [Presented by Ethiyal Raj Wilson]
We have investigated the interaction of gold (Au) with the semiconductor boron carbide through X-ray photoemission and heterojunction diode fabrication. The plasma enhanced chemical vapor deposition (PECVD) hydrogenated semiconducting boron carbide films, deposited from closo-1,7-dicarbadodecaborane (metacarborane, m-B10C2H12), shows a shift in the binding energies of the core level photoemission features when gold is deposited on the surface. The shifting of the B 1s level is smaller than for the C 1s level and the non-uniform nature of the shifts indicates a strong, complex and reversible gold chemical interaction with the surface, particularly with the C sites. The capacitance-voltage, C(V), and current versus voltage, I(V), results for the metacarborane film deposited on p-type Si(100) yield a carrier scattering time of 50 ns which is significantly smaller than the 35 ms for the PECVD orthocarborane boron carbide films.