Progress in periodically oriented III-nitride materials

Authors

Jennifer Hite, U.S. Naval Research LaboratoryFollow

Date of this Version

2016

Citation

Journal of Crystal Growth 456 (2016), pp. 133–136.

Comments

U.S. government work.

Abstract

The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion. An overview of recent progress in growing periodically oriented (PO) III-nitrides is discussed, including AlN, AlGaN, and GaN. Successes in fabricating thick PO GaN structures (>500 mm) for uses in frequency conversion are highlighted.