United States Department of Defense
United States Navy: Publications
Accessibility Remediation
If you are unable to use this item in its current form due to accessibility barriers, you may request remediation through our remediation request form.
Date of this Version
2016
Citation
Journal of Crystal Growth 456 (2016), pp. 133–136.
Abstract
The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion. An overview of recent progress in growing periodically oriented (PO) III-nitrides is discussed, including AlN, AlGaN, and GaN. Successes in fabricating thick PO GaN structures (>500 mm) for uses in frequency conversion are highlighted.
COinS
Comments
U.S. government work.