U.S. Department of Defense
Date of this Version
2016
Citation
Journal of Crystal Growth 456 (2016), pp. 133–136.
Abstract
The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion. An overview of recent progress in growing periodically oriented (PO) III-nitrides is discussed, including AlN, AlGaN, and GaN. Successes in fabricating thick PO GaN structures (>500 mm) for uses in frequency conversion are highlighted.
COinS
Comments
U.S. government work.