Pairwise cobalt doping of boron carbides with cobaltocene

Authors

• A. Yu. Ignatov, Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, Louisiana
• Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
• L. Carlson, Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, Ohio 45433-7765, USA
• D. LaGraffe, Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, Ohio 45433-7765, USA
• Jennifer I. Brand, University of Nebraska-LincolnFollow
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2007

Comments

Published in J. Appl. Phys. 102, 083520 (2007). Copyright © 2007 American Institute of Physics. Used by permission.

Abstract

We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition (PECVD) grown “C₂B₁₀H_x” semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown boron carbides as a random fragment of the cobaltocene source gas. The Co atoms are fivefold boron coordinated (R=2.10±0.02 Å) and are chemically bonded to the icosahedral cages of B₁₀CH_x or B₉C₂H_y. Pairwise Co doping occurs, with the cobalt atoms favoring sites some 5.28±0.02 Å apart.