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Authors
- Daniel Hofstetter, Institute of Physics, University of Neuchatel, 1 A.-L. Breguet, CH-2000 Neuchatel, Switzerland
- Yargo Bonetti, Institute of Physics, University of Neuchatel, 1 A.-L. Breguet, CH-2000 Neuchatel, Switzerland
- Fabrizio Giorgetta, Institute of Physics, University of Neuchatel, 1 A.-L. Breguet, CH-2000 Neuchatel, Switzerland
- Abdel-Hamid El-Shaer, Institute for Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig, Germany
- Andrey Bakin, Institute for Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig, Germany
- Andreas Waag, Institute for Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig, Germany
- Rudiger Schmidt-Grund, Institut für Experimentelle Physik II, University of Leipzig, Linnéstr. 5, D-04103 Leipzig, Germany
- Mathias Schubert, University of Nebraska - LincolnFollow
- Marius Grundmann, Institut für Experimentelle Physik II, University of Leipzig, Linnéstr. 5, D-04103 Leipzig, Germany
Date of this Version
2007
Abstract
The authors demonstrate an optically pumped ZnO distributed feedback laser operating at 383 nm. For a large temperature range between 10 and 270 K, the device lased in a single longitudinal mode. Mode selection was accomplished via a third order diffraction grating, which was dry etched into a 120 nm thick Si3N4 layer deposited on the ZnO active region. They observed a spectral linewidth of 0.4 nm, a pump threshold intensity of 0.12 MW/cm2, and a peak output power of 14 mW. From wavelength versus temperature measurements, they deduced a temperature tuning coefficient of the ZnO refractive index of 9x10−5 K−1.
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Comments
Published in Appl. Phys. Lett. 91, 111108 (2007). Copyright © 2007 American Institute of Physics. Used by permission.