Pairwise cobalt doping of boron carbides with cobaltocene

Authors

A. Yu. Ignatov, Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, Louisiana
Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
L. Carlson, Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, Ohio 45433-7765, USA
D. LaGraffe, Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, Ohio 45433-7765, USA
Jennifer I. Brand, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2007

Comments

Published in J. Appl. Phys. 102, 083520 (2007). Copyright © 2007 American Institute of Physics. Used by permission.

Abstract

We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition (PECVD) grown “C₂B₁₀H_x” semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown boron carbides as a random fragment of the cobaltocene source gas. The Co atoms are fivefold boron coordinated (R=2.10±0.02 Å) and are chemically bonded to the icosahedral cages of B₁₀CH_x or B₉C₂H_y. Pairwise Co doping occurs, with the cobalt atoms favoring sites some 5.28±0.02 Å apart.