Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane

Authors

• F. Keith Perkins, University of Wisconsin, Madison
• R.A. Rosenberg, Synchrotron Radiation Center, University of Wisconsin, Stoughton
• Sunwoo Lee, Syracuse UniversityFollow
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

April 1991

Comments

Published by American Institute of Physics; J. Appl. Phys. 69 (1991) 4103–4109. Copyright 1991. Permission to use.

Abstract

Boron has been deposited successfully on Si(111) from the synchrotron-radiation-induced decomposition of decaborane (14), i.e., B₁₀H₁₄. The rate of deposition is limited by the adsorption rate of decaborane (14) on the surface. In addition there is some indication that there is an activation barrier to dissociative adsorption. The synchrotron-radiation- induced growth rate of boron thin films from decaborane (14) is linear with coverage for a large range of thickness, suggesting a constant sticking coefficient for decaborane adsorption at room temperature.