Comparison of n-type Gd₂O₃ and Gd-doped HfO₂

Authors

Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
David Wooten, Air Force Institute of Technology, 2950 HobsonWay, Wright Patterson Air Force Base, OH
Juan Colon Santana, University of Nebraska-Lincoln
Joonhee Michael An, University of Nebraska-Lincoln
Kirill D. Belashchenko, University of Nebraska-LincolnFollow
N. Lozova, Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, LA
J. C. Petrosky, Air Force Institute of TechnologyFollow
Andrei Sokolov, University of Nebraska-LincolnFollow
Jinke Tang, University of WyomingFollow
Wendong Wang, University of Wyoming, Laramie, WY
Navamoney Arulsamy, University of Wyoming, Laramie, WY
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2009

Comments

Published in J. Phys.: Condens. Matter 21 (2009) 045602 (8pp).

Abstract

Gd₂O₃ and Gd-doped HfO₂ films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd₂O₂ and Gd-doped HfO₂ films, respectively. In the case of Gd₂O₃, strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO₂–silicon and Gd₂O₃–silicon heterojunctions are demonstrated.