Comparison of n-type Gd₂O₃ and Gd-doped HfO₂

Authors

• Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
• David Wooten, Air Force Institute of Technology, 2950 HobsonWay, Wright Patterson Air Force Base, OH
• Juan Colon Santana, University of Nebraska-Lincoln
• Joonhee Michael An, University of Nebraska-Lincoln
• Kirill D. Belashchenko, University of Nebraska-LincolnFollow
• N. Lozova, Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, LA
• J. C. Petrosky, Air Force Institute of TechnologyFollow
• Andrei Sokolov, University of Nebraska-LincolnFollow
• Jinke Tang, University of WyomingFollow
• Wendong Wang, University of Wyoming, Laramie, WY
• Navamoney Arulsamy, University of Wyoming, Laramie, WY
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2009

Comments

Published in J. Phys.: Condens. Matter 21 (2009) 045602 (8pp).

Abstract

Gd₂O₃ and Gd-doped HfO₂ films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd₂O₂ and Gd-doped HfO₂ films, respectively. In the case of Gd₂O₃, strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO₂–silicon and Gd₂O₃–silicon heterojunctions are demonstrated.