Department of Physics and Astronomy: Publications and Other Research
ORCID IDs
Ashley S. Dale https://orcid.org/0000-0001-8233-5258
Jian Zhang https://orcid.org/0000-0003-0274-0814
Peter A. Dowben https://orcid.org/0000-0002-2198-4710
Date of this Version
3-1-2021
Citation
Ekanayaka, T.K.; Hao, G.; Mosey, A.; Dale, A.S.; Jiang, X.; Yost, A.J.; Sapkota, K.R.;Wang, G.T.; Zhang, J.; N’Diaye, A.T.; et al. Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications. Magnetochemistry 2021, 7, 37. https://doi.org/10.3390/ magnetochemistry7030037
Abstract
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,20-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.
Included in
Atomic, Molecular and Optical Physics Commons, Condensed Matter Physics Commons, Engineering Physics Commons, Other Physics Commons
Comments
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