Chemical and Biomolecular Engineering, Department of
Date of this Version
1989
Document Type
Article
Citation
CleiLents, L.D., Busse, J. E., and Mehta, J., "Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride," Semiconductor Fabrication; Technology and Metrology, ASTM STP 990, Dinesh C. Gupta, editor, American Society for Testing and Materials, 1989.
Abstract
A novel dry etching process for silicon dioxide has been developed. This process, carried out at ambient temperature and pressure, uses anhydrous hydrogen fluoride, water vapor in a nitrogen carrier, and a unique processing sequence to achieve etch rates of about 200A/second, with 5 percent or better uniformity.
The overall reaction is a complicated sequence of surface hydration and surface fluorlnation by adsorption, reaction, and product desorptlon. This paper presents two proposed reaction mechanisms and describes how experimental data from a laminar flow reactor were used to evaluate the mechanisms.
Comments
Copyright 1989 by ASTM International. Used by permission.