Inhibition of surface-related electrical breakdown of long p⁺-i-n⁺ silicon structures

Authors

F. E. Peterkin, University of Nebraska - Lincoln
P. F. Williams, University of Nebraska - LincolnFollow
B. J. Hankla, University of Nebraska - Lincoln
L. L. Buresh, University of Nebraska - Lincoln
S. A. Woodward, University of Nebraska - Lincoln

Date of this Version

May 1993

Comments

Published in Appl. Phys. Lett. 62 (18), 3 May 1993. Copyright © 1993 American Institute of Physics. Used by permission.

Abstract

Semiconductors such as silicon and GaAs appear attractive for use in high voltage devices because of their high bulk dielectric strength. Typically, however, such devices fail at a voltage well below that expected due to a poorly understood, surface-related breakdown process. In this letter we present empirical results which show that such breakdown of long silicon p⁺-i-n⁺ devices can be inhibited by the application of weak visible or near-infrared illumination. These results suggest a technique for avoiding surface flashover in practical high voltage devices, and provide information about the physical mechanisms responsible for initiating flashover.